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DATA SHEET MMBT3904
NPN GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE FEATURES
* NPN epitaxial silicon, planar design * Collector-emitter voltage VCE = 40V
.056(1.40)
.119(3.00) .110(2.80)
40 Volts
POWER
225 mWatts
SOT- 23
Unit: inch (mm)
environment substance directive request
MECHANICAL DATA
Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-202G, Method 208 Approx. Weight: 0.008 gram Marking: S1A
Top View
3 Collector
1 BASE 3 COLLECTOR
.083(2.10) .066(1.70)
.006(.15) .002(.05)
.006(.15)MAX
.020(.50) .013(.35)
1 Base
2 Emitter
2 EMITTER
ABSOLUTE RATINGS
PA R A M E TE R C ol ct r-E m it rVolage lo e te t C ol ct r-B ase Volage lo e t E m it r-B ase Volage te t C ol ct rC urent-C ontnuous lo e r i S ym bol VC EO VC BO VEBO IC Val e u 40 60
6.0
.044(1.10)
.035(0.90)
.103(2.60)
.086(2.20)
* Collector current IC = 200mA * Pb free product are available : 99% Sn above can meet Rohs
.047(1.20)
.007(.20)MIN
U nis t V V V mA
200
THERMAL CHARACTERISTICS
PA R A M E TE R M ax P ow erD i si aton ( ot 1) spi Ne Ther alR esi t nce ,Juncton t A m bi nt m sa io e Juncton Tem per t r i aue S t r ge Tem per t r oa aue S ym bol PTO T RJA TJ
STG TI
Val e u 225 556 - 5 t 150 5o - 5 t 150 5o
U nis t mW
O
C/ W
O
C C
O
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
STAD-NOV.26.2004
PAGE . 1
ELECTRICAL CHARACTERISTICS TA=25oC
PA RA M E TE R C o lle c to r - E mi tte r B re a k d o wn Vo lta g e C o lle c to r - B a s e B re a k d o wn Vo lta g e E mi tte r - B a s e B re a k d o wn Vo lta g e B a s e C ut o f f C ur r e nt C o l l e c t o r C ut o f f C ur r e nt S ym b o l V (B R) C E O V (B R) C B O V (B R) E B O IBL ICEX Te s t C o n d i t i o n IC = 1 . 0 m A , IB = 0 IC = 1 0 u A , IE = 0 IE = 1 0 u A , IC = 0 V C E =3 0 V, V E B =3 .0 V V C E =3 0 V, V E B =3 .0 V IC = 0 . 1 m A , V C E = 1 . 0 V IC = 1 . 0 m A , V C E = 1 . 0 V IC = 1 0 m A , V C E = 1 . 0 V IC = 5 0 m A , V C E = 1 . 0 V IC = 1 0 0 m A , V C E = 1 . 0 V IC = 1 0 m A , IB = 1 . 0 m A IC = 5 0 m A , IB = 5 . 0 m A IC = 1 0 m A , IB = 1 . 0 m A IC = 5 0 m A , IB = 5 . 0 m A V C B = 5 V , IE = 0 , f = 1 M H z V C B = 0 . 5 V , IC = 0 , f = 1 M H z V C C =3 V,V B E =-0 .5 V, IC = 1 0 m A , IB = 1 . 0 m A V C C =3 V,V B E =-0 .5 V, IC = 1 0 m A , IB = 1 . 0 m A V C C = 3 V , IC = 1 0 m A IB 1 = IB 2 = 1 . 0 m A V C C = 3 V , IC = 1 0 m A IB 1 = IB 2 = 1 . 0 m A M IN . 40 60 6 .0 40 70 100 60 30 0 .6 5 T YP. MA X . 50 50 300 0 .2 0 .3 0 .8 5 0 .9 5 4 .0 8 .0 35 35 200 50 U ni t s V V V nA nA
D C C ur r e nt G a i n ( N o t e 2 )
hF E
-
C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e (No te 2 ) B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e (No te 2 ) C o l l e c t o r - B a s e C a p a c i t a nc e E m i t t e r - B a s e C a p a c i t a nc e D e l a y Ti m e R i s e Ti m e S t o r a g e Ti m e F a l l Ti m e
V C E (S AT) V B E (S AT) C CBO C EBO td tr ts tf
V V pF pF ns ns ns ns
Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+3V
+ 1 0 .9 V
0
-0 .5 V
300ns D u ty C y c le ~ 2 .0 %
275
< 1ns
10K
C S* < 4 p F
D e la y a n d R is e T im e E q u iv a le n t T e s t C ir c u it
3V + 3V
27 5 27 5
+ 10 .9 V
0
1 0 to 5 0 0 u s D u ty C yc le ~ 2 .0%
-9 .1 V
10K
C S * < 4 pF C S * < 4 pF
< 1ns
1N916
S to ra g e a n d F a ll T im e E q u iv a le n t T e s t C irc u it
STAD-NOV.26.2004
PAGE . 2
ELECTRICAL CHARACTERISTICS CURVE
300 250 200 hFE 150 TJ = 25 C 100
0.400 1.400
TJ = 150 C
VCE = 1V
1.200 1.000
TJ = 100 C
VBE (V)
TJ = 100 C 0.800 TJ = 25 C 0.600
50 0 0.01 0.1 1 10 100 1000
0.200 0.000 0.01 0.1
TJ = 150
VCE = 1V
1
10
100
1000
Collector Current, I C (mA)
Collector Current, IC (mA)
Fig. 1. Typical hFE vs Collector Current
1.000
Fig. 2. Typical VBE vs Collector Current
1.0 TJ = 25 C
IC/IB = 10
TJ = 150 C
TJ = 100 C
VCE(sat) (V)
0.100 TJ = 25 C
VBE(sat) (V)
TJ = 150 C
IC/IB = 10
0.010 0.01 0.1 1 10 100 1000
0.1 0.01 0.1 1 Collector Current, I C (mA) 10 100
Collector Current, I C (mA)
Fig. 3. Typical VCE (sat) vs Collector Current
10
Fig. 4. Typical VBE (sat) vs Collector Current
TJ = 25 C CIB (EB) Capacitance (pF)
COB (CB)
1 0.1 1 10 100 Reverse Voltage, VR (V)
Fig. 5. Typical Capacitances vs Reverse Voltage
STAD-NOV.26.2004 PAGE . 3
MOUNTING PAD LAYOUT
SOT-23
Unit: inch (mm)
0.035(0.9)
0.031(0.8)
0.037(0.95)
ORDER INFORMATION
* Packing information T/R - 12K per 13" plastic Reel T/R - 3.0K per 7" plastic Reel
LEGAL STATEMENT
IMPORTANT NOTICE This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in the application. The information will help the customer's technical experts determine that the device is compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and information herein are subject to change without notice. New products and improvements in products and product characterization are constantly in process. Therefore, the factory should be consulted for the most recent information and for any special characteristics not described or specified.
Copyright Pan Jit International Inc. 2003 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract. The information presented is believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
STAD-NOV.26.2004
0.078(2.0)
PAGE . 4

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